vishay tlp.5600 document number 83043 rev. 4, 21-mar-03 vishay semiconductors www.vishay.com 1 96 11502 sideview led, 5 mm tinted diffused \ features ? even luminance of the emitting surface wide viewing angle yellow and green color categorized for dc and pulse operation applications indicating and illumination purposes parts table absolute maximum ratings t amb = 25 c, unless otherwise specified tlpr5600 , tlph5600 , tlpy5600 , tlpg5600 , tlpp5600 part color, luminous intensity angle of half intensity ( ? ) te c h n o l o gy tlpr5600 red, i v > 1 mcd 80 gaasp on gaas tlph5600 high eff. red, i v > 0.63 mcd 80 gaasp on gap tlpy5600 ye l l o w, i v > 0.63 mcd 80 gaasp on gap tlpg5600 green, i v > 0.63 mcd 80 gap on gap tlpp5600 pure green, i v > 0.63 mcd 80 gap on gap parameter tes t co nd iti on part symbol value unit reverse voltage v r 6 v dc forward current tlpr5600 i f 20 ma tlph5600 i f 30 ma tlpy5600 i f 30 ma tlpg5600 i f 30 ma tlpp5600 i f 30 ma surge forward current t p 10 s i fsm 1 a power dissipation tlpr5600 p v 60 mw t amb 60 c tlph5600 p v 100 mw t amb 60 c tlpy5600 p v 100 mw t amb 60 c tlpg5600 p v 100 mw t amb 60 c tlpp5600 p v 100 mw junction temperature t j 100 c operating temperature range t amb - 40 to + 100 c storage temperature range t stg - 55 to + 100 c soldering temperature t 5 s, 2 mm from body t sd 260 c
www.vishay.com 2 document number 83043 rev. 4, 21-mar-03 vishay tlp.5600 vishay semiconductors optical and electrical characteristics t amb = 25 c, unless otherwise specified red tlpr5600 1) in one packing unit i vmin. /i vmax. 0.5 high efficiency red tlph5600 1) in one packing unit i vmin. /i vmax. 0.5 yellow tlpy5600 1) in one packing unit i vmin. /i vmax. 0.5 thermal resistance junction/ ambient tlpr5600 r thja 500 k/w tlph5600 r thja 400 k/w tlpy5600 r thja 400 k/w tlpg5600 r thja 400 k/w tlpp5600 r thja 400 k/w parameter test condition part symbol min ty p. max unit luminous intensity 1) i f = 10 ma i v 1 2.5 mcd dominant wavelength i f = 10 ma d 630 nm peak wavelength i f = 10 ma p 640 nm angle of half intensity i f = 10 ma ? 80 deg forward voltage i f = 20 ma v f 2 3 v reverse voltage i r = 10 a v r 6 15 v junction capacitance v r = 0, f = 1 mhz c j 50 pf parameter test condition part symbol min ty p. max unit luminous intensity 1) i f = 10 ma i v 0.63 1.5 mcd dominant wavelength i f = 10 ma d 612 625 nm peak wavelength i f = 10 ma p 635 nm angle of half intensity i f = 10 ma ? 80 deg forward voltage i f = 20 ma v f 2 3 v reverse voltage i r = 10 a v r 6 15 v junction capacitance v r = 0, f = 1 mhz c j 50 pf parameter test condition part symbol min ty p. max unit luminous intensity 1) i f = 10 ma i v 0.63 1.5 mcd dominant wavelength i f = 10 ma d 581 594 nm peak wavelength i f = 10 ma p 585 nm angle of half intensity i f = 10 ma ? 80 deg forward voltage i f = 20 ma v f 2.4 3 v reverse voltage i r = 10 a v r 6 15 v junction capacitance v r = 0, f = 1 mhz c j 50 pf parameter test condition part symbol value unit
vishay tlp.5600 document number 83043 rev. 4, 21-mar-03 vishay semiconductors www.vishay.com 3 green 1) in one packing unit i vmin. /i vmax. 0.5 pure green tlpp5600 1) in one packing unit i vmin. /i vmax. 0.5 typical characteristics (t amb = 25 c unless otherwise specified) parameter tes t co nd iti on part symbol min ty p. max unit luminous intensity 1) i f = 10 ma i v 0.63 1.5 mcd dominant wavelength i f = 10 ma d 562 575 nm peak wavelength i f = 10 ma p 565 nm angle of half intensity i f = 10 ma ? 80 deg forward voltage i f = 20 ma v f 2.4 3 v reverse voltage i r = 10 a v r 6 15 v junction capacitance v r = 0, f = 1 mhz c j 50 pf parameter tes t co nd iti on part symbol min ty p. max unit luminous intensity 1) i f = 10 ma i v 0.63 1.6 mcd dominant wavelength i f = 10 ma d 555 565 nm peak wavelength i f = 10 ma p 555 nm angle of half intensity i f = 10 ma ? 80 deg forward voltage i f = 20 ma v f 2.4 3 v reverse voltage i r = 10 a v r 6 15 v junction capacitance v r = 0, f = 1 mhz c j 50 pf figure 1. power dissipation vs. ambient temperature 0 20 40 60 80 100 0 20406080100 t amb ? ambient temperature ( q c ) 17520 p ?power dissipation (mw) v high efficiency red yellow , green, pure green red figure 2. forward current vs. ambient temperature 0 5 10 15 20 25 30 35 40 0 102030405060708090100 t amb ? ambient temperature ( q c ) 17519 i ?forward current ( ma ) f red high efficiency red, yellow, green, pure green
www.vishay.com 4 document number 83043 rev. 4, 21-mar-03 vishay tlp.5600 vishay semiconductors figure 3. forward current vs. pulse length figure 4. rel. luminous intensity vs. angular displacement figure 5. forward current vs. forward voltage 0.01 0.1 1 10 1 10 100 1000 10000 t p ? pulse length ( ms ) 100 95 10047 i ? forward current ( ma ) f t p /t=0.01 0.02 0.05 0.1 0.2 1 0.5 t amb 65 c 0.4 0.2 0 0.2 0.4 0.6 95 10078 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0 i ? relative luminous intensity v rel 0.1 1.0 10.0 100.0 012345 v f ? forward voltage ( v ) 16634 f i ? forward current ( ma ) figure 6. rel. luminous intensity vs. ambient temperature figure 7. relative luminous intensity vs. forward current figure 8. relative intensity vs. wavelength 0 0 0.4 0.8 1.2 1.6 95 10074 20 40 60 80 100 i ? relative luminous intensity v rel t amb ? ambient temperature ( c ) red i f =10ma 110 0.01 0.1 1 10 i f ? forward current ( ma ) 100 95 10076 i ? relative luminous intensity v rel red 0.0 0.2 0.4 0.6 0.8 1.0 1.2 550 590 630 670 710 750 17521 ? wavelength ( nm ) red i ? relative intensity rel
vishay tlp.5600 document number 83043 rev. 4, 21-mar-03 vishay semiconductors www.vishay.com 5 figure 9. forward current vs. forward voltage figure 10. rel. luminous intensity vs. ambient temperature figure 11. rel. lumin. intensity vs. forw. current/duty cycle 02468 0.1 1 10 100 1000 10 95 10026 v f ? forward voltage ( v ) i ? forward current ( ma ) f high efficiency red t p /t=0.001 t p =10 s 0 0 0.4 0.8 1.2 1.6 95 10027 20 40 60 80 100 i ? relative luminous intensity v rel t amb ? ambient temperature ( c ) high efficiency red i f =10ma 10 20 50 100 200 0 0.4 0.8 1.2 1.6 2.4 95 10321 500 0.5 0.2 0.1 0.05 0.02 1 i f (ma) t p /t i ? relative luminous intensity v rel 2.0 high efficiency red figure 12. relative luminous intensity vs. forward current figure 13. relative intensity vs. wavelength figure 14. forward current vs. forward voltage 110 0.01 0.1 1 10 i f ? forward current ( ma ) 100 95 10029 i ? relative luminous intensity v rel high efficiency red 590 610 630 650 670 0 0.2 0.4 0.6 0.8 1.2 690 95 10040 i ? relative luminous intensity v rel ? wavelength ( nm ) 1.0 high efficiency red 02468 0.1 1 10 100 1000 10 95 10030 v f ? forward voltage ( v ) i ? forward current ( ma ) f yellow t p /t=0.001 t p =10 s
www.vishay.com 6 document number 83043 rev. 4, 21-mar-03 vishay tlp.5600 vishay semiconductors figure 15. rel. luminous intensity vs. ambient temperature figure 16. rel. lumin. intensity vs. forw. current/duty cycle figure 17. relative luminous intensity vs. forward current 0 0 0.4 0.8 1.2 1.6 95 10031 20 40 60 80 100 i ? relative luminous intensity v rel t amb ? ambient temperature ( c ) yellow i f =10ma 10 20 50 100 200 0 0.4 0.8 1.2 1.6 2.4 95 10260 500 0.5 0.2 0.1 0.05 0.02 1 i f (ma) t p /t i ? relative luminous intensity v rel 2.0 yellow 110 0.01 0.1 1 10 i f ? forward current ( ma ) 100 95 10033 i ? relative luminous intensity v rel yellow figure 18. relative intensity vs. wavelength figure 19. forward current vs. forward voltage figure 20. rel. luminous intensity vs. ambient temperature 550 570 590 610 630 0 0.2 0.4 0.6 0.8 1.2 650 95 10039 i ? relative luminous intensity v rel ? wavelength ( nm ) 1.0 yellow 02468 0.1 1 10 100 1000 10 95 10034 v f ? forward voltage ( v ) i ? forward current ( ma ) f t p /t=0.001 t p =10 s green 0 0 0.4 0.8 1.2 1.6 95 10035 20 40 60 80 100 i ? relative luminous intensity v rel t amb ? ambient temperature ( c ) i f =10ma green
vishay tlp.5600 document number 83043 rev. 4, 21-mar-03 vishay semiconductors www.vishay.com 7 figure 21. specific luminous intensity vs. forward current figure 22. relative luminous intensity vs. forward current figure 23. relative intensity vs. wavelength 10 20 50 100 200 0 0.4 0.8 1.2 1.6 2.4 95 10263 500 v rel 2.0 green i ? specific luminous intensity i f (ma) 0.5 0.2 0.1 0.05 0.02 1 t p /t 110 0.01 0.1 1 10 i f ? forward current ( ma ) 100 95 10037 i ? relative luminous intensity v rel green 520 540 560 580 600 0 0.2 0.4 0.6 0.8 1.2 620 95 10038 i ? relative luminous intensity v rel ? wavelength ( nm ) 1.0 green figure 24. forward current vs. forward voltage figure 25. rel. luminous intensity vs. ambient temperature figure 26. specific luminous intensity vs. forward current 01234 0.1 1 10 100 v f ? forward voltage ( v ) 5 95 9988 i ? forward current ( ma ) f pure green 020406080 0 0.4 0.8 1.2 1.6 2.0 100 95 9991 i ? relative luminous intensity v rel t amb ? ambient temperature ( c ) pure green 95 10261 10 20 50 100 200 0 0.4 0.8 1.2 1.6 2.4 500 v rel 2.0 i ? specific luminous intensity i f ? forward current ( ma ) pure green
www.vishay.com 8 document number 83043 rev. 4, 21-mar-03 vishay tlp.5600 vishay semiconductors figure 27. relative luminous intensity vs. forward current figure 28. relative intensity vs. wavelength 110 0.01 0.1 1 10 i f ? forward current ( ma ) 100 95 9998 i ? relative luminous intensity v rel pure green 500 520 540 560 580 0 0.2 0.4 0.6 0.8 1.2 600 95 10325 1.0 i ? relative luminous intensity v rel ? wavelength ( nm ) pure green
vishay tlp.5600 document number 83043 rev. 4, 21-mar-03 vishay semiconductors www.vishay.com 9 package dimensions in mm 95 11321
www.vishay.com 10 document number 83043 rev. 4, 21-mar-03 vishay tlp.5600 vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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